GT30J65MRB,S1E
شماره قطعه:
GT30J65MRB,S1E
دستهبندی محصولات:
IGBTهای تکی
تولیدکننده:
Toshiba Semiconductor and Storage
توضیحات:
IGBT 650V 60A TO-3P
بستهبندی:
Tube
وضعیت ROHS:
بله
ارز:
USD
پیدیاف:
اطلاعات
مشخصات
- Mounting Type Through Hole
- Part Status Active
- Reverse Recovery Time (trr) 200 ns
- IGBT Type -
- Input Type Standard
- Power - Max 200 W
- Package / Case TO-3P-3, SC-65-3
- Current - Collector (Ic) (Max) 60 A
- Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
- Operating Temperature 175°C (TJ)
- Gate Charge 70 nC
- Supplier Device Package TO-3P(N)
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Switching Energy 1.4mJ (on), 220µJ (off)
- Td (on/off) @ 25°C 75ns/400ns
- Test Condition 400V, 15A, 56Ohm, 15V